| PART |
Description |
Maker |
| GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode
45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
| GLT41116 GLT4116-30J4 GLT4116-30TC GLT4116-35J4 GL |
64k x 16 CMOS Dynamic RAM with Fast Page Mode 64k的16的CMOS动态随机存储器的快速页面模
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PDM34089SA10QTY PDM34089SA10TQTY PDM34089SA12TQTY |
3.3V 64K x 32 fast CMOS synchronous static RAM with burst counter
|
PARADIGM
|
| AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28
64K 8K x 8 CMOS E2PROM
8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85
64K EEPROM with 64-Byte Page & Software Data Protection
64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
From old datasheet system
64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| LH5164AT-80L |
CMOS 64K (8K x8) Static RAM(CMOS 64K (8K x8) 静态RAM)
|
Sharp Corporation
|
| MCM6208C MCM6208CJ12 MCM6208CJ12R2 MCM6208CJ15 MCM |
CB 5C 5#12 PIN RECP WALL 64K X 4 STANDARD SRAM, 12 ns, PDIP24
64K x 4 Fast Static RAM
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT27LV512A AT27LV512A-12 AT27LV512A-12JC AT27LV512 |
High Speed CMOS Logic Quad Bilateral Switches 14-SOIC -55 to 125 64K X 8 OTPROM, 150 ns, PQCC32
High Speed CMOS Logic Quad Bilateral Switches 14-TSSOP -55 to 125 64K X 8 OTPROM, 90 ns, PQCC32
512K 64K x 8 Low Voltage OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
| W49L102P-70B W49L102Q-90 W49L102Q-90B W49L102Q-70 |
64K X 16 CMOS 3.3V FLASH MEMORY
MB 26C 26#20 SKT RECP
MB 4C 4#12 PIN RECP
MB 15C 14#20 1#16 PIN RECP
MB 19C 19#20 SKT RECP
MB 19C 19#20 PIN RECP
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
MB 26C 26#20 PIN RECP 64K X 16 FLASH 3.3V PROM, 90 ns, PDSO40
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| AT27BV512-12JC AT27BV512-12JI AT27BV512-12RC AT27B |
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SOIC -55 to 125 64K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-PDIP -55 to 125 64K X 8 OTPROM, 150 ns, PDSO28
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
